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    • 专利摘要:
    FIELD OF THE INVENTION The present invention relates to ferroelectric thin films formed from solution compositions by sol-gel processing, which have a large amount of polarization, significantly improved retention and imprint properties compared to PZT, fine particles and good film properties, uniform electrical properties and low leakage. It has a current and is suitable for nonvolatile memories. Ferroelectric thin film of the present invention is a general formula (Pb V Ca W Sr X La Y ) (Zr Z Ti 1-Z ) 0 3 (wherein 0.9≤V≤1.3, O≤W≤0.1, O≤X≤0.1, O <Y≤0.1, O <Z≤0.9, and at least one of W and X is not 0. And a hydrolyzable organometallic compound thereof, a hydrolyzable organometallic compound thereof, a partially hydrolyzed product and / or a polycondensation product of the hydrolyzable organometallic compound.
    公开号:KR19990081803A
    申请号:KR1019980054467
    申请日:1998-12-11
    公开日:1999-11-15
    发明作者:샨 썬；토마스 도모코스 헤드나기；톰 이. 데이븐포트；히로또 우찌다；쓰또무 아쓰끼；가꾸지 우오즈미；겐스께 게게야마；가쓰미 오기
    申请人:죤스 그레고리 B.；램트론 인터내쇼날 (주)；후지무라 마사지카, 아키모토 유미；미쓰비시 마테리알 가부시키가이샤；
    IPC主号:
    专利说明:

    Ferroelectric Thin Films and Solutions: Compositions and Methods
    The present invention relates to a solution composition for forming a novel ferroelectric thin film having a Perovskite crystal structure. More specifically, the present invention is a ferroelectric thin film, which has particularly suitable properties for nonvolatile memories such as fine particles, good film properties, low leakage current and excellent resistance to polarization fatigue, and can also be used in various applications such as ferroelectric thin films. It relates to a solution composition capable of forming a method, a method of forming a ferroelectric thin film using the same, a ferroelectric thin film thus formed, and its use.
    Currently, a semiconductor memory DRAM (DRAM) is mainly used for information storage in electronic devices. However, they require refresh cycles at regular intervals due to the progressive loss of memory due to leakage currents. In addition, since it consumes electricity, it causes environmental problems. Thus, attention has been focused on ferroelectric random access memories, which are nonvolatile memories (no memory loss) that do not require refresh cycles.
    Ferroelectric random access memory is made by substituting a ferroelectric thin film for a capacitor portion of a DRAM composed of silicon oxide, and the automatic polarization of the ferroelectric thin film can be switched by application of an electric field between two different residual polarization states. I use it. Since the remnant polarization state is maintained even after removal of the electromagnetic field, this forms a nonvolatile memory. In addition to ferroelectric random access memory, in addition to memory being nonvolatile and randomly accessible, low write voltage, fast write performance, low electricity consumption, multiple write-erase cycles, and conventional nonvolatile memory, EEPROM and flash It has advantages such as high compatibility with DRAM over memory. Ferroelectric random access memory has the most advantageous characteristics for storing information among nonvolatile memories known to date.
    Ferroelectric materials used in ferroelectric random access memory require characteristics such as large amounts of polarization (converted charge), small dielectric constant, good resistance to polarization fatigue, good memory retention, high speed polarization switching, and low leakage current. .
    A representative example of a ferroelectric material used as a ferroelectric random access memory is PZT (solid solution of lead titanate and lead zirconate represented by the formula Pb (Zr, Ti) 0 3 ), which has a large amount of polarization and a relatively small dielectric constant. Although SrBi 2 Ta 2 O 3 (SBT) is known with excellent polarization fatigue properties, it requires a high processing temperature above 700 ° C. and has the disadvantage of small amount of polarization.
    In general, methods for forming oxide thin films of composites are classified into vapor phase methods such as sputtering and CVD, and liquid phase methods such as sol-gel processing. PZT thin films can be formed in one of these ways. The vapor phase process can form a uniform membrane, but the disadvantages are that the equipment for this is expensive and generally low productivity. In addition, in CVD, the film composition is likely to change, thus causing a problem that the film properties are unstable. In the sol-gel processing method, the film composition is easily controlled, but it is difficult to form a uniform film because the film tends to be powdered. In this regard, Japanese Patent Laid-Open No. 4-19911 discloses that when a thin film of PZT or the like is formed by the sol-gel processing method, a uniform thin film can be obtained by adding a stabilizer such as β-diketone to the coating solution. It is disclosed that it can.
    PZT has a large amount of polarization, which is the most basic requirement of ferroelectric random access memory, and is very advantageous as a ferroelectric raw material for use in nonvolatile memory or nonvolatile ferroelectric memory. However, thin films made of these materials are prone to polarization fatigue (reduced amount of polarization as a result of repeated polarization inversion) and insufficient resistance to polarization fatigue (simply referred to as "fatigue characteristics"). There is this. Poor fatigue characteristics shorten the life of the RAM and consequently limit its use.
    Another problem with PZT is that their memory retention and imprint characteristics are insufficient. The retention force characteristic reflects the retention of the data recorded in the memory in the operating environment. The imprint characteristic indicates the degree of deterioration of the ferroelectric thin film due to voltage stress, pulse, polarization reversal, and temperature in an operating environment. In addition, these characteristics also greatly influence the usable period of the ferroelectric random access memory.
    The present invention solves the above-mentioned problems inherent in PZT thin films and provides a solution composition for ferroelectric thin films which is suitable for ferroelectric random access memories according to sol-gel processing or similar methods, and also provides thin films formed therefrom. . In particular, an object of the present invention is a large amount of polarization; Significantly improved fatigue, retention and imprint properties, fine particles and good film properties compared to PZT; It is to provide a solution composition having uniform electrical properties and a low leakage current on the entire substrate and capable of forming a ferroelectric thin film through a sol-gel process or the like, and a ferroelectric thin film formed therefrom.
    According to the invention, the above-mentioned objects are of the general formula (Pb v Ca w Sr x La y ) (Zr z Ti 1-Z ) 0 3 (wherein 0.9≤V≤1.3, O≤W≤0.1, O≤X It can be achieved with a solution composition for forming a ferroelectric thin film containing a metal oxide represented by ≤0.1, O <Y≤0.1, O <Z≤0.9, and at least one of W and X is not 0). The composition comprises a thermally decomposable organometallic compound of each metal constituting the metal oxide, a hydrolyzable organometallic compound thereof, a partially hydrolyzed product and / or a polycondensation product of the hydrolyzable organometallic compound represented by the above formula. It contains a solution dissolved in an organic solvent at a rate that provides a metal atom ratio. The term "solution" as used herein refers not only to the original solution but also to a colloidal solution, ie a sol.
    A preferred method of forming a ferroelectric thin film from the above-described solution composition comprises coating the solution composition on a substrate, heating the coated substrate in an acidic and / or vapor-containing or inert atmosphere to have an amorphous structure on the substrate. Forming a metal oxide thin film, and heat-treating the substrate having an amorphous structure at a temperature below 700 ° C. to crystallize the thin film of metal oxide, if necessary, coating and heating until the thin film has a desired thickness, Or repeat the coating, heating, and crystallization steps. According to the present invention, there is also provided a ferroelectric film formed from the above-mentioned solution, a nonvolatile memory and a capacitor film equipped with the ferroelectric thin film.
    1 shows a surface SEM photograph of a PZT thin film doped with La, Ca, and Sr formed by a sol-gel processing method from the solution composition of the present invention.
    FIG. 2 shows a surface SEM image of a PZT thin film formed by sputtering and doped with La, Ca, and Sr in the same manner as above.
    According to the present invention, the general formula (Pb v Ca w Sr x La y ) (Zr z Ti 1-Z ) 0 3 (wherein 0.9 ≦ V ≦ 1.3, O ≦ W ≦ 0.1, O ≦ X ≦ 0.1, O < A ferroelectric thin film containing a metal oxide represented by Y ≦ 0.1, O <Z ≦ 0.9, and at least one of W and X is not 0) is formed by a sol-gel processing method or a similar method. Even if the atomic ratio of the oxygen atom in the above general formula is set to 3, in reality, since part of the divalent lead is substituted with trivalent La, it may vary from 3. Thus, "about 3" is more accurate, but is set to 3 for convenience.
    The composition of the metal oxide represented by the above-mentioned general formula is derived from the PZT base composition to which (or doped) with either or both Ca and Sr together with La is added. Ferroelectric materials with La added to PZT are already known as PLZT. However, it is not reported that ferroelectric materials added with Ca and Sr have suitable properties as nonvolatile memories for ferroelectric random access memories.
    More preferred atomic ratios for each metal in the aforementioned composition ratios are:
    V is preferably 1.0 to 1.25, more preferably 1.05 to 1.20;
    W is preferably 0.01 to 0.08, more preferably 0.03 to 0.07, most preferably 0.04 to 0.06;
    X is preferably 0 to 0.08, more preferably 0 to 0.05, most preferably 0 to 0.03;
    Y is preferably 0.01 to 0.06, more preferably 0.01 to 0.04, most preferably 0.01 to 0.02;
    Z is preferably 0.1 to 0.8, more preferably 0.2 to 0.6, most preferably 0.35 to 0.5.
    The solution composition used to form a thin film of the ferroelectric material containing the metal oxide is a part of the thermally decomposable organometallic compound, hydrolyzable organometallic compound thereof, and the hydrolyzable organometallic compound of each metal constituting the metal oxide. Hydrolyzed products and / or polycondensation products are solutions which are dissolved in an organic solvent at a rate which provides the metal atom ratios represented by the above formulas, similar to the conventional sol-gel processing or other methods.
    The pyrolytic or hydrolyzable organometallic compound is preferably a compound in which an organic radical is bonded to the metal through its oxygen atom or nitrogen atom. Representative examples of the organometallic compound include metal alkoxides, metal carboxylates, metal β-diketonato complexes, metal β-diketoester complexes, β-iminoketo complexes, and metal amino complexes. Of these, since metal alkoxides are hydrolyzable compounds, they undergo a polycondensation reaction, and metal-oxygen-metal (M-O-M) bonds are formed during the condensation reaction. Most of the remaining compounds are thermally decomposable, which are converted to metal oxides upon heating in an oxygen, vapor-containing or inert atmosphere.
    Examples of organometallic compounds that can be used in the present invention are shown below, but these are for illustrative purposes only and other compounds that are hydrolyzable or pyrolysable compounds may be used.
    Examples of metal alkoxides are ethoxide, propoxide, isopropoxide, n-butoxide, isobutoxide, t-butoxide, 2-methoxyethoxide, 2-methoxypropoxide, 2- Ethoxypropoxide and the like. Examples of metal carboxylates are acetate, propionate, butyrate, 2-ethylhexanoate, octylate and the like.
    The metal β-diketonato complex is a complex in which β-diketone is coordinated to the metal. Examples of β-diketones include acetylacetone, trifluoroacetylacetone, hexafluoroacetylacetone, dipivaloylmethane and the like. Examples of β-diketoesters which are ligands of the β-diketoester complexes include methyl esters of ethyl acetoacetic acid, ethyl esters, propyl esters, butyl esters and the like. The metal β-iminoketo complex is a complex in which β-iminoketone is coordinated to the metal. Examples of β-iminoketones include aminopenten-2-one, 1,1,1,5,5,5-hexamethylaminopenten-2-one and the like. Metal amino complexes are complexes in which polyvalent amines are coordinated to the metal. Representative examples of polyvalent amines are ethylenediamine and ethylenediaminetetraacetic acid (EDTA).
    As each metal component constituting the metal oxide of the general formula described above, an organometallic compound used as its feed material can be selected. Preferably, the organometallic compounds that can be used are those which can be dissolved in an organic solvent and are converted to metal oxides at temperatures below 500 ° C. in an acidic and / or vapor-containing or inert atmosphere. In addition, the organometallic compound may contain at least one metal. In other words, a single organometallic compound is sometimes used as a source of several metals. It is preferable to use at least one pyrolytic organometallic compound as a raw material. As the raw organometallic compound, preferably, as high purity as possible should be used, and if necessary, they are purified before use. Their purification can be carried out by recrystallization, distillation, sublimation, chromatography and the like.
    In general, it is preferable to use carboxylic acids as the organic lead compound that provides Pb. As organometallic compounds used as Ca, Sr, and La sources, it is preferable to use carboxylic acids or alkoxides of the above metals. As organometallic compounds used as Zr and Ti sources, it is preferable to use alkoxides of the above metals or various kinds of complexes described above.
    The raw organometallic compound of each metal is weighed so that it can be present in a ratio which provides the atomic ratio of metals represented by the above-mentioned general formula, dissolved in a suitable organic solvent and, if necessary, partially hydrolyzed (ie , Incompletely) and / or polycondensed, and then used for the formation of ferroelectric thin films.
    In addition, the raw organometallic compound may be produced in situ. That is, a precursor of the raw metal compound that generates the raw metal compound when dissolved in the organic solvent may be used. For example, one metal material (eg, metal strontium) may be dissolved in alcohol to produce a metal alkoxide in situ, or one metal material may be dissolved in a solvent containing a ligand of the above-mentioned complex. It is possible to create metal complexes in situ.
    The solvent is not particularly limited as long as it can dissolve the raw organometallic compound, and is generally a polar solvent such as alcohol, ester, ketone and alkanolamine. It is preferable to use a solvent whose boiling point (hereinafter referred to as boiling point at standard pressure) is 100 ° C or higher. This allows water derived from the raw material to be removed by azeotropic distillation, and as will be described later, the solution can be easily dehydrated. Most preferred solvents include alkoxyalcohol solvents such as 2-methoxyethanol, 2-methoxypropanol and 2-ethoxypropanol and alkanolamine solvents such as monoethanolamine and diethanolamine. Solvents of this kind have strong solvation functionality with respect to the raw organometallic compounds and therefore have excellent solubility in them.
    Although the raw material method of the said solution does not have a restriction | limiting in particular, some of these examples are demonstrated below.
    First, among the raw organometallic compounds, a carboxylate compound having crystal water is generally dissolved in a suitable organic solvent having a boiling point of 100 ° C or higher. The resulting solution is distilled by azeotropic distillation to remove water derived from the crystallization water of the raw material to achieve dehydration of the solution. If the solution still contains the crystallized water of the starting compound, proceeding with hydrolysis or polycondensation may cause precipitation in some cases where the solution is later concentrated to heat, thereby affecting the complexation of the metal compound. Dehydration of the solution may be carried out using an inert dehydrating agent. When alkoxides and / or complex residual raw organometallic compounds of the complex type are added to the dehydrated solution and dissolved, a solution containing each raw organometallic compound (hereinafter referred to as "raw material solution") is obtained.
    The raw material solution may be used to form a ferroelectric thin film by itself, but it is preferable to further heat-concentrate to affect the target complexation of the metal compound in the solution. As used herein, the term "complexation" means that various types of organometallic compounds present in the solution are bonded through M-O-M 'bonds. One example of the above reaction is illustrated by the following scheme.
    M (O-CO-R) 2 + 2M '(OR') 4 → (R'0) 3 M'-OM-0-M '(OR') 3 + 2R-CO-0-R '
    By this complexation, for example, relatively volatile lead compounds are combined with other compounds to prevent them from volatilizing during heating at the time of film formation, and to form a uniform thin film without variation in composition. The heating temperature employed at this time is not particularly limited as long as the complexing is completed, but usually in the range of 100 to 160 ° C. Then, if necessary, the solvent is added to adjust the concentration of the solution to suit the coating. In general, the concentration of the raw material solution used in the coating is preferably in the range of 2 to 15% by weight based on the concentration converted to the metal oxide represented by the above-mentioned general formula.
    If the raw organometallic compounds consist only of metal carboxylates and / or metal alkoxides (ie, they do not contain metal complexes), the solution at a rate of 0.2 to 3 moles per mole of total metal in the solution Preference is given to adding a stabilizer to the stabilizer, wherein the stabilizer is selected from the group consisting of β-diketones, β-ketone acids, β-ketoesters, oxyacids, diols, higher carboxylic acids, alkanolamines and polyamines. .
    The timing of addition of the stabilizer is not particularly limited, but if the complexing of the metal compound is carried out by heating and concentration, it should preferably be added later so that the stabilizer is not lost during the concentration period. After the stabilizer is added to the solution, the solution is heated so that the stabilizer reacts with the starting compound.
    The compounds used as stabilizers are all capable of forming complexes, and each of the raw metal compounds can be present in a coarse polymer state throughout the metal-oxygen-metal or metal-nitrogen-metal bonds. As a result, similarly to the above complexation, an even thin film can be easily obtained by preventing volatilization of a part of the metal compound during heating at the time of film formation. The storage stability of the solution is also improved, increasing the shelf life without precipitation. If the amount of the stabilizer is added too little, almost no effect can be obtained, and if the amount is added too high, it may interfere with the hydrolysis of the raw compound and cause precipitation.
    Among the compounds useful as stabilizers, β-diketones, β-ketoesters, alkanolamines and polyamines may be similar to those used as ligands for the formation of metal complexes as raw materials. A representative example of β-ketone acid is acetoacetic acid. An oxy acid is an aliphatic compound which has a hydroxyl group and a carboxylic acid group, for example, glycolic acid, lactic acid, tartaric acid, citric acid, etc. Examples of diols include ethylene glycol, propylene glycol, and the like.
    If the raw organometallic compound contains a metal complex such as, for example, β-diketonato, the ligand of the complex can perform a function similar to the ligand of the stabilizer, although it is possible to add a small amount of the stabilizer. Addition is unnecessary.
    When the hydrolyzable organometallic compound in the raw material solution needs to be partially hydrolyzed, a small amount of water is added to the solution and then heated to cause hydrolysis. Once the raw compound is partially hydrolyzed, the wettability of the solution to the substrate is improved. The amount of water added may be, for example, 0.1 to 0.3 moles per mole of the total amount of metal in the solution. Small amounts of acid (ie acetic acid and formic acid) can sometimes be added. As hydrolysis proceeds, the hydrolyzed product partially polycondenses to form a sol. Since hydrolysis and polycondensation must proceed incompletely within a range that does not cause gelation, the amount of water added, temperature, reaction time, and the like can be appropriately controlled.
    After coating the substrate with the solution composition (raw solution) prepared according to the present invention, the substrate is heated in an oxidizing and / or vapor-containing or inert atmosphere, a thin film of metal oxide is formed on the substrate, and the substrate is metal oxide. The ferroelectric thin film can be formed by crystallizing the thin film of metal oxide by heat treatment at a temperature higher than the crystallization temperature of. The coating and heating steps or coating, heating and crystallization steps can be repeated until a thin film of desired thickness is obtained.
    The substrate may be appropriately selected depending on the use of the ferroelectric thin film, but needs to be made of a heat resistant material that resists heat during the heating and heat treatment steps. For example, the substrate may be composed of a semiconductor such as silicon, ceramic, metal or a combination of the above materials. As necessary, it is already known to provide components such as transistors, electrodes, internal wires, and the like on a substrate.
    Coating is usually carried out by the spin coat method, but is not limited thereto. After coating, the coated film can be dried, for example, at a temperature of 100 to 150 ° C. to evaporate the solvent from the thin film. The coated substrate is then heated in an acidic and vapor-containing atmosphere and the organometallic compound constituting the coating film is completely pyrolyzed. As a heating atmosphere, an atmosphere containing both oxygen and steam is sufficient. The heating temperature is preferably set to 500 ° C or less so as not to damage the electrode, the substrate and the like. It is preferable that heating temperature is 260-500 degreeC.
    Through the heating, a thin film containing a metal oxide is formed on the substrate, but the metal oxide itself does not completely have a perovskite type crystal structure, and at least part thereof is amorphous. In order to have a film function like a ferroelectric thin film, the entire film must be completely crystallized. Thus, the substrate must be further heat treated in the temperature range of 450 to 700 ° C.
    Since the heat treatment only needs thermal energy, the heat treatment atmosphere is not particularly limited, but it is preferable to perform the heat treatment in an oxygen atmosphere in order to prevent oxygen deficiency defects of the metal oxide generated during the heat treatment. For example, the heat treatment may be performed in a pure oxygen atmosphere.
    Moreover, the heating and heat treatment as described above can be carried out continuously under the same atmosphere. In addition, the heating step may be omitted, it may be converted to a metal oxide thin film, and crystallized at the same time in the heat treatment step, but it is not preferable because a smooth thin film does not tend to be formed.
    If a thin film of the desired thickness is not formed as a single coating, the coating and heating steps or coating, heating and crystallization steps are repeated until a thin film of the desired thickness is obtained. The former method is more efficient since only one heat treatment is required. In the case of ferroelectric random access memory, the film thickness of the ferroelectric thin film is usually in the range of 1000 to 3000 GPa.
    When the ferroelectric thin film formed from the solution composition of the present invention is compared with a ferroelectric thin film containing a metal oxide of the same composition and formed by sputtering, it has fine particles, and furthermore, it is not only good in variation of the film thickness according to the part of the substrate but also in good condition. Since it has a film property, there is an advantage that the variation of the property of electricity is less. Compared with the conventional PZT composition, the PZT thin film formed by the same sol-gel processing method has a low leakage current and can constitute a random access memory having excellent polarization fatigue, holding force and imprint characteristics.
    The ferroelectric thin film has a perovskite crystal structure, and in order to be a film having large polarization, the <111> orientation is preferably 70% or more of the volume fraction. The degree of such crystalline orientation can be controlled by the type of undercoat for the ferroelectric thin film (which is the lower electrode in the case of a capacitor), heating during film formation, heat treatment conditions for crystallization, and the like.
    The ferroelectric thin film of the present invention can constitute a capacitor having excellent fatigue characteristics and low leakage current when suitable electrodes are formed on or below it, and the electrode is oxidized with a platinum electrode such as Pt or Pt / Ti. Oxide electrodes such as ruthenium and iridium oxide. When a random access memory that is a nonvolatile memory is manufactured from the capacitor, a ferroelectric random access memory having excellent retention and imprint characteristics can be obtained. For example, ferroelectric random access memory can be type 2T / 2C without two reference cells (two transistors / 2 capacitors), 1T / 1C type with one reference cell (one transistor / 1 capacitor) and The ferroelectric thin film may be any one of a metal ferro-silicon field effect transistor (MFSFET) type formed directly on a silicon substrate.
    In addition to ferroelectric random access memories, the capacitors are useful, for example, as capacitors for DRAM capacitors or GaAs IC bias capacitors and chip type multilayer ceramic capacitors. In addition to the capacitor, the ferroelectric thin film of the present invention may be applied to laser source materials, optical shutters, vibration elements, piezoelectric filters, infrared sensors, and the like.
    The invention is illustrated by the following examples, but the invention is not limited to the following examples.
    Example 1
    This example illustrates a raw material solution and a film-processing method for forming a PZT ferroelectric thin film doped with Ca, Sr and La having a composition represented by Pb 1.10 Ca 0.05 Sr 0.02 La 0.03 Zr 0.40 Ti 0.60 0 3 .
    17.78 g of lead acetate trihydrate, 0.38 g of calcium acetate monohydrate and 0.45 g of lanthanum acetate 1.5 hydrate were dissolved in 45 g of 2-methoxyethanol, and water derived from crystallized water was removed by azeotropic distillation to remove the solution. Dehydrated. Thereafter, 7.74 g of zirconium tetra-n-butoxide, 7.40 g of titanium tetraisopropoxide, and 7.46 g of a solution of metal strontium, respectively, were added to the above-mentioned solution in 2-methoxyethanol, and then 150 占 폚. The raw metal compounds were complexed with each other by heating for 2 hours at. Subsequently, 8.56 g of acetylacetone (2 mol per mole of total metal amount) was added to the solution as a stabilizer, and the stabilizer was reacted with a metal compound by heating at 140 ° C. under reflux for 1.5 hours. After cooling, 100 g of a raw material solution having a concentration of 15% by weight in the form converted to the above-mentioned composition by adding 2-methoxyethanol, and forming a ferroelectric thin film represented by the above-mentioned composition formula was prepared.
    A portion of the raw material solution was concentrated to obtain a gelled sample, which was used for TG-DTA analysis in an oxidizing atmosphere. It was confirmed that the sample completely degraded below 420 ° C. That is, all raw organometallic compounds are converted to metal oxides below the above temperature. In addition, even if another part of the raw material solution was left at room temperature for one month, the formation of precipitate was not visually confirmed.
    Using the above-mentioned raw material solution, coating was carried out by spin coating on a platinum bottom electrode formed on the front surface of a 6 inch silicon wafer by sputtering. To dry the coating film, the coated wafer was first heated to 150 ° C. in air for 1 minute and then at 400 ° C. for 10 minutes. As the TG-DTA analysis results show, almost all of the raw material compounds in the coating film were decomposed during heating to form a thin film of metal oxide containing no organic compound at all. After coating and heating were repeated three times, in order to crystallize the thin film, the wafer was finally heat-treated at 600 ° C. for 1 hour in oxygen, resulting in a ferroelectric thin film.
    Measurement by X-ray diffraction revealed that 70% or more of the volume fraction of the formed film had a perovskite crystal structure with <111> orientation. Undercoat platinum also took the <111> orientation, and as a result, the peak of platinum in the X-ray diffraction chart overlapped with the <111> orientation, so the orientation was determined using the <222> peak.
    EPMA analysis of the membrane composition confirmed the same as the composition of the solution. The thickness of the film at various locations on the wafer was measured by cross-sectional SEM photographs. The middle membrane was thicker than the edges. The average thickness was 2500Å and the deviation was less than 3%. After the etching, the surface of the film was observed by SEM, and the particles were fine with an average particle diameter of 1000 mm 3, the size of the particles was uniform, and the film properties were good. One example of the SEM photograph is shown in FIG. 1. The fine, good and uniform structure makes the electrical properties of the entire film uniform as illustrated below.
    A platinum coating was formed on the ferroelectric film by sputtering and patterned by photolithography and ion-etching to prepare an upper platinum electrode. Subsequently, after heating at 650 ° C. for 30 minutes in oxygen, electrical properties were measured. At least 90% of all samples obtained the following results:
    Fatigue at 5V start: 3xl0 7 to 1xl0 8 cycles
    Leakage current at 5 V: 0.4 to 4 μA / cm 2
    Retention characteristics
    After firing at 150 ° C for 88 hours Q SS : 13.5 μC
    Q SS rate: -1.6%
    Imprint properties
    Qos: 17.14 μC after firing at 150 ° C for 88 hours
    Q OS rate: -5.23%
    As used herein, the term "start fatigue" refers to the number of polarization shift cycles in which residual polarization begins to decrease during polarization shift. Polarization conversion was induced by bipolar continuous waves (± 5V, 625kHz). Leakage current represents the best value obtained with a + 5V DC voltage applied.
    Qss and Qos are described in S.D. Traynor et al., Integrated Ferroelectrics, 1997, Vol. 16 pp. 63-76]. The Qss and Qos rates represent the reduction rates calculated from the slope of the straight line obtained by plotting the Qss and Qos values, respectively, on the natural log scale time axis when the sample was baked at 150 ° C.
    Qss and Qss rates have proved to be an indicator for evaluating the memory retention characteristics of ferroelectric random access memory. The larger the Qss and the smaller the Qss ratio, the better the retention characteristics. Similarly, Qos and Qos rates have proven to be an indicator for evaluating the imprint characteristics of ferroelectric random access memory. The larger the Qos and the smaller the Qos rate, the better the imprint characteristics.
    In addition, even if lanthanum acetate is used as a lanthanum raw material in this embodiment, even when a raw material solution is prepared using lanthanum octylate or lanthanum 2-methoxyethoxide, ferroelectric thin films having electrical properties similar to those described above are consequently formed. Formed.
    In addition, when the platinum electrode is replaced with an oxide electrode made of ruthenium oxide or iridium oxide, the number of polarizations converted to start fatigue is increased up to 10 12 , thereby further improving polarization fatigue characteristics.
    Example 2
    This embodiment is Pb 1.176 Ca 0.048 La 0.016 Zr 0.417 Ti 0.583 O 3 La and Ca composition of PZT ferroelectric thin film material solution and membrane-forming dope having a represented by - illustrates a processing method.
    100 g of a ferroelectric thin film processing raw material solution was prepared in the same manner as in Example 1, except that no strontium was added and the amount of each raw material except strontium was changed to make the above-mentioned composition.
    A portion of the raw material solution was concentrated to obtain a gelled sample, which was used for TG-DTA analysis in an oxidizing atmosphere. It was confirmed that the sample was completely decomposed at 420 ° C or lower. In addition, even if another part of the raw material solution was left at room temperature for one month, the formation of precipitate was not visually confirmed.
    Using the above-mentioned raw material solution, a ferroelectric thin film was formed on the platinum bottom electrode on the silicon wafer similarly to the method of Example 1. It was confirmed that the film formed by the X-ray diffraction method had a perovskite crystal structure. EPMA analysis of the membrane composition also confirmed the same as the composition of the solution. The average thickness of the film was 2500 mm 3, and the variation in film thickness between the center portion and the edge portion of the wafer was less than 3%. In addition, when the surface of the film was observed by SEM, the particles were fine with an average particle diameter of 1000 mm 3, the size of the particles was uniform, and the film quality was good. The fine, good and uniform structure makes the electrical properties of the entire film uniform as illustrated below.
    The electrical properties were measured similarly to the method of Example 1. At least 90% of all samples obtained the following results:
    Fatigue at 5V start: 3xl0 7 to 1xl0 8 cycles
    Leakage current at 5 V: 0.4 to 4 μA / cm 2
    Retention characteristics
    After firing at 150 ℃ for 88 hours Q SS : 12 μC
    Q SS rate: -2.6%
    Imprint properties
    Qos: 11.9 μC after firing at 150 ° C for 88 hours
    Q OS rate: -6.7%
    Also in this case, when the platinum electrode is replaced with an oxide electrode made of ruthenium oxide or iridium oxide, the polarization fatigue property is further improved as in Example 1.
    Example 3
    This example illustrates a raw material solution and a film-processing method for forming a PZT ferroelectric thin film doped with Sr and La having a composition represented by Pb 1.064 Sr 0.03 La 0.013 Zr 0.444 Ti 0.556 O 3 .
    100 g of a ferroelectric thin film-forming raw material solution was prepared in the same manner as in the method of Example 1, except that calcium acetate monohydrate was not added and the amount of each remaining raw compound was changed to make the above-mentioned composition.
    A portion of the raw material solution was concentrated to obtain a gelled sample, which was used for TG-DTA analysis in an oxidizing atmosphere. It was confirmed that the sample was completely decomposed at 420 ° C or lower. In addition, even if another part of the raw material solution was left at room temperature for one month, the formation of precipitate was not visually confirmed.
    Using the above-mentioned raw material solution, a ferroelectric thin film was formed on the platinum bottom electrode on the silicon wafer similarly to the method of Example 1. It was confirmed that the film formed by the X-ray diffraction method had a perovskite crystal structure. EPMA analysis of the membrane composition also confirmed the same as the composition of the solution. The average thickness of the film was 2500 mm 3, and the variation in film thickness between the center portion and the edge portion of the wafer was less than 3%. SEM observation of the surface of the film showed that the particles were fine with an average particle diameter of 1000 mm 3, the size of the particles was uniform, and the film properties were good. The fine, good and uniform structure makes the electrical properties of the entire film uniform as illustrated below.
    The electrical properties were measured similarly to the method of Example 1. At least 90% of all samples obtained the following results:
    Fatigue at 5V start: 3xl0 7 to 1xl0 8 cycles
    Leakage current at 5 V: 0.4 to 4 μA / cm 2
    Retention characteristics
    After firing at 150 ° C for 88 hours Q SS : 15.1 μC
    Q SS rate: 4.0%
    Imprint properties
    Qos: 1.9 μC after firing at 150 ° C for 88 hours
    Q OS rate: -19.25%
    Also in this case, when the platinum electrode is replaced with an oxide electrode made of ruthenium oxide or iridium oxide, the polarization fatigue property is further improved as in Example 1.
    Comparative Example 1
    This example illustrates a raw material solution and a film-processing method for forming a PZT ferroelectric thin film having a composition represented by Pb 1.10 Zr 0.40 Ti 0.60 O 3 . The composition is the same as that used in Example 1 except that the doping elements Ca, Sr and La were removed.
    A raw material solution having a concentration of about 15% by weight was obtained in a similar manner to the method of Example 1, except that Ca, Sr, and La raw compounds were not added.
    Using this raw material solution, a ferroelectric thin film was formed on the platinum bottom electrode on the silicon wafer similarly to the method of Example 1. SEM observation of the surface of the film showed that the particles were relatively coarse with an average size of 500 mm 3, but the particle size was uniform and the film properties were good. Thus, as illustrated below, the electrical properties of the entire film were uniform.
    Fatigue at 5V start: 3xl0 3 to 1xl0 4 cycles
    Leakage current at 5 V: 0.4 to 4 mA / cm 2
    Retention characteristics
    Qos: 16.71 μC after firing at 150 ° C for 88 hours
    Q OS rate: -12.30%
    Example 1 to compare the number of times of fatigue was reduced four digits, had a leakage current is large, a relatively small Q OS, OS Q ratio was more than doubled.
    Therefore, when the ferroelectric thin film based on PZT doped with Ca, Sr, and La is formed by the sol-gel processing method of the present invention, low leakage current, remarkably excellent polarization fatigue, and excellent imprint characteristics are compared with those of the PZT thin film. It has been found that ferroelectric thin films can be formed.
    Comparative Example 2
    This comparative example is an example in which a ferroelectric thin film doped with Ca, Sr and La having the same composition as Example 1 represented by Pb 1.10 Ca 0.05 Sr 0.02 La 0.03 Zr 0.40 Ti 0.60 O 3 is formed by sputtering.
    Oxides of the respective component metals were mixed in the same proportion as the above composition and calcined to prepare a target product. Using this, a thin film having a thickness of about 2500 mm 3 was formed on the platinum lower electrode on the 6-inch silicon wafer. Thereafter, heat treatment was performed at 600 ° C. for 1 hour in an oxygen atmosphere to crystallize the film, thereby forming a ferroelectric thin film on the electrode.
    In the case of the obtained film, the film thickness variation between the center portion and the edge portion of the wafer was found to be greater than that of the example, at a 5% level. As a result of observing the film surface under SEM, similar to Examples 1 to 3, the particles were fine with an average size of 1000 mm 3, but the particle size was not uniform and the film property was poor. One example of these SEM photographs is shown in FIG. 2. Thus, as illustrated below, the electrical properties were slightly dispersed throughout the film.
    The electrical properties were measured similarly to the method of Example 1. As a result, the same performance as in Example 1 was obtained at less than 30% of the total number of samples (as described below).
    Fatigue at 5V start: 3xl0 7 to 1xl0 4 cycles
    Leakage current at 5 V: 0.4 to 4 μA / cm 2
    Q SS after firing at 150 ℃ for 88 hours Q SS : 17.14 μC
    Q SS rate: -5.23%
    In Example 1, in which a PZT ferroelectric thin film doped with Ca, Sr and La according to the present invention is formed by sol-gel processing, at least 90% of the sample number exhibits good electrical properties as described above without dispersion. In contrast, when the same film was formed by sputtering, samples showing good electrical properties were reduced to less than 30% of the total number of samples, and the electrical properties were widely dispersed. Thus, the yield of the product was significantly lowered.
    The present invention makes it possible to form ferroelectric thin films by sol-gel processing. The membranes of the present invention have significantly smaller leakage currents; Improved polarization fatigue, retention and imprint characteristics; Microparticles and good film properties; And uniform electrical properties throughout the film. Accordingly, the present invention enables the production of high performance ferroelectric thin films useful for ferroelectric random access memory capacitors and the like with high productivity and high yield.
    权利要求:
    Claims (20)
    [1" claim-type="Currently amended] General formula (Pb V Ca W Sr X La Y ) (Zr Z Ti 1-Z ) 0 3, (wherein 0.9≤V≤1.3, O≤W≤0.1, O≤X≤0.1, O <Y≤0.1, A liquid composition for forming a ferroelectric thin film containing a metal oxide represented by O <Z≤0.9 and at least one of W and X is not 0), wherein the metal oxide is formed at a rate that provides the metal atomic ratio represented by the above formula. Characterized by containing a solution in which a thermally decomposable organometallic compound of each constituting metal, a hydrolyzable organometallic compound thereof, a partially hydrolyzed product and / or a polycondensation product of the hydrolyzable organometallic compound are dissolved in an organic solvent A liquid composition for forming a ferroelectric thin film.
    [2" claim-type="Currently amended] The liquid composition for forming a ferroelectric thin film according to claim 1, wherein the organic radical of the organometallic compound is bonded to the metal through its oxygen atom or nitrogen atom.
    [3" claim-type="Currently amended] The organometallic compound according to claim 2, wherein the organometallic compound is selected from the group consisting of metal alkoxides, metal carboxylates, metal β-diketonato complexes, metal β-diketoester complexes, β-iminoketo complexes and metal amino complexes. A liquid composition for forming a ferroelectric thin film, which is characterized by being.
    [4" claim-type="Currently amended] The liquid composition for forming a ferroelectric thin film according to claim 1, wherein the organometallic compound is changed into a metal oxide at a temperature of 500 ° C or lower.
    [5" claim-type="Currently amended] The liquid composition for forming a ferroelectric thin film according to claim 2, wherein the organometallic compound is changed into a metal oxide at a temperature of 500 ° C or lower.
    [6" claim-type="Currently amended] 4. The liquid composition for forming a ferroelectric thin film according to claim 3, wherein the organometallic compound is changed into a metal oxide at a temperature of 500 DEG C or lower.
    [7" claim-type="Currently amended] The organometallic compound according to claim 1, wherein the organometallic compound is selected from the group consisting of metal alkoxides and metal carboxylates, and the solution is β-diketone, β-ketone in a ratio of 0.2 to 3 moles per mole of total metal in the composition. A liquid composition for forming a ferroelectric thin film, characterized by containing a stabilizer selected from the group consisting of acids, β-keto esters, oxyacids, diols, higher carboxylic acids, alkanolamines, and polyamines.
    [8" claim-type="Currently amended] The organometallic compound is selected from the group consisting of metal alkoxides and metal carboxylates, and the solution is β-diketone, β-ketone in a ratio of 0.2 to 3 moles per mole of total metal in the composition. A liquid composition for forming a ferroelectric thin film, characterized by containing a stabilizer selected from the group consisting of acids, β-keto esters, oxyacids, diols, higher carboxylic acids, alkanolamines, and polyamines.
    [9" claim-type="Currently amended] The organometallic compound is selected from the group consisting of metal alkoxides and metal carboxylates, and the solution is β-diketone, β-ketone in a ratio of 0.2 to 3 moles per mole of total metal in the composition. A liquid composition for forming a ferroelectric thin film, characterized by containing a stabilizer selected from the group consisting of acids, β-keto esters, oxyacids, diols, higher carboxylic acids, alkanolamines, and polyamines.
    [10" claim-type="Currently amended] An organometallic compound is selected from the group consisting of metal alkoxides and metal carboxylates, and the solution is β-diketone, β-ketone at a ratio of 0.2 to 3 moles per mole of total metal in the composition. A liquid composition for forming a ferroelectric thin film, characterized by containing a stabilizer selected from the group consisting of acids, β-keto esters, oxyacids, diols, higher carboxylic acids, alkanolamines, and polyamines.
    [11" claim-type="Currently amended] General formula (Pb v Ca w Sr x La y ) (Zr z Ti 1-Z ) 0 3 (wherein 0.9≤V≤1.3, O≤W≤0.1, O≤X≤0.1, O <Y≤0.1, O Coating the substrate with a liquid composition for forming a ferroelectric thin film containing a metal oxide represented by <Z ≦ 0.9 and at least one of W and X are not 0),
    Heating the coated substrate to form a thin film of metal oxide on the substrate, and
    And heat-treating the substrate at a temperature of less than 700 ° C. to crystallize the thin film of metal oxide.
    [12" claim-type="Currently amended] 12. The method of forming a ferroelectric thin film according to claim 11, wherein the coating and heating steps or coating, heating and crystallization steps are repeated until the thin film has a desired thickness.
    [13" claim-type="Currently amended] A ferroelectric thin film formed from the liquid composition of claim 1.
    [14" claim-type="Currently amended] A ferroelectric thin film formed from the liquid composition of claim 2.
    [15" claim-type="Currently amended] A ferroelectric thin film formed from the liquid composition of claim 3.
    [16" claim-type="Currently amended] A ferroelectric thin film formed from the liquid composition of claim 4.
    [17" claim-type="Currently amended] A ferroelectric thin film formed from the liquid composition of claim 7.
    [18" claim-type="Currently amended] 18. The ferroelectric thin film of claim 17, wherein at least 70% of the volume fractions of the thin film have a <111> orientation.
    [19" claim-type="Currently amended] 19. The ferroelectric thin film according to claim 18, further comprising a capacitor.
    [20" claim-type="Currently amended] 20. The ferroelectric thin film of claim 19, further comprising a nonvolatile memory.
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    同族专利:
    公开号 | 公开日
    JPH11292626A|1999-10-26|
    KR100453416B1|2005-06-13|
    US6203608B1|2001-03-20|
    US20010016229A1|2001-08-23|
    EP0950727A1|1999-10-20|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-04-15|Priority to US09/061,362
    1998-04-15|Priority to US09/061,362
    1998-04-15|Priority to US9/061,362
    1998-12-11|Application filed by 죤스 그레고리 B., 램트론 인터내쇼날 (주), 후지무라 마사지카, 아키모토 유미, 미쓰비시 마테리알 가부시키가이샤
    1999-11-15|Publication of KR19990081803A
    2005-06-13|Application granted
    2005-06-13|Publication of KR100453416B1
    优先权:
    申请号 | 申请日 | 专利标题
    US09/061,362|US6203608B1|1998-04-15|1998-04-15|Ferroelectric thin films and solutions: compositions|
    US09/061,362|1998-04-15|
    US9/061,362|1998-04-15|
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